Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4862664
Reference26 articles.
1. Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate
2. Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN∕GaN heterojunctions
3. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance
4. Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD
5. AlN/GaN MOS-HEMTs With Thermally Grown $\hbox{Al}_{2} \hbox{O}_{3}$ Passivation
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1. Effect of in-situ SiNx grown with different carrier gas on structural and electrical properties of GaN-based MISHEMTs;Applied Physics Letters;2023-04-24
2. Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability;IEEE Transactions on Electron Devices;2023
3. Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition;Applied Physics Express;2022-01-10
4. A Study of the Gate-Stack Small-Signal Model and Determination of Interface Traps in GaN-Based MIS-HEMTs;IEEE Transactions on Electron Devices;2021-04
5. Active and buffer layers of GaN HEMT: ECV profiling and 2DEG calculation;Materials Research Innovations;2019-11-07
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