Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability-Reference-Cited by-同舟云学术

Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability

Published:2023 Issue: Volume: Page:1-5
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Haochen¹^ORCID,Hu Kunpeng¹,Sun Yue¹,Yang Lei¹,Huang Zhe¹,Guo Yifu²,Deng Junyang²,Liang Kun¹,Xing Zhanyong¹,Wang Hu¹,Zhang Mingshuo¹,Chen Yao³,Guo Shiping³,Li Mengmeng²^ORCID,Sun Haiding¹^ORCID

Affiliation:

1. School of Microelectronics, University of Science and Technology of China, Hefei, China

2. Institute of Microelectronics, Key Laboratory of Microelectronic Devices and Integrated Technology, CAS, Beijing, China

3. Advanced Micro-Fabrication Equipment Inc, Shanghai, China

Funder

National Natural Science Foundation of China

Students’ Innovation and Entrepreneurship Foundation of USTC

USTC Center for Micro and Nanoscale Research and Fabrication

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/4358746/10149536.pdf?arnumber=10149536

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