Active and buffer layers of GaN HEMT: ECV profiling and 2DEG calculation
Author:
Affiliation:
1. St. Petersburg State Electrotechnical University (LETI), St. Petersburg, Russia
Publisher
Informa UK Limited
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/14328917.2019.1688559
Reference27 articles.
1. Different Types of Field-Effect Transistors - Theory and Applications
2. Temperature admittance spectroscopy of boron doped chemical vapor deposition diamond
3. S2-T3: Next generation gallium nitride HEMTs enabled by diamond substrates
4. Effect of Dielectric Thickness on Power Performance of AlGaN/GaN HEMTs
5. Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition
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