Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD-Reference-Cited by-同舟云学术

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Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD

Published:2012-08 Issue:8 Volume:33 Page:1123-1125
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Huang Tongde,Zhu Xueliang,Lau Kei May

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6246720/06222310.pdf?arnumber=6222310

Cited by 47 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on geometry-dependent n+-InGaN regrowth via MOCVD for AlN/GaN ohmic contact application;Journal of Vacuum Science & Technology B;2024-08-02

2. InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE;Applied Physics Letters;2024-07-01

3. MBE-Regrowth Ohmics in AlN/GaN HEMTs with the Rc of 0.09 Ω·mm;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

4. AlN/GaN HEMTs with f_max Exceeding 300 GHz by Using Ge-Doped n⁺⁺GaN Ohmic Contacts;ACS Applied Electronic Materials;2023-09-11

5. High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications;IEEE Electron Device Letters;2023-06

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