MBE-Regrowth Ohmics in AlN/GaN HEMTs with the Rc of 0.09 Ω·mm-Reference-Cited by-同舟云学术

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MBE-Regrowth Ohmics in AlN/GaN HEMTs with the Rc of 0.09 Ω·mm

Published:2023-11-13 Issue: Volume: Page:1-3
ISSN:
Container-title:2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
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Author:

Qin Lingjie¹,Zhu Jiejie¹,Guo Jingshu¹,Liu Siyu¹,Zhou Yuxi¹,Li Mengdi¹,Zhang Bowen¹,Ma Xiaohua¹

Affiliation:

1. School of Microelectronics, Xidian University,Xi'an,People's Republic of China,710071

Funder

National Natural Science Foundation of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10380804/10380975/10381367.pdf?arnumber=10381367

Reference13 articles.

1. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz

2. High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

3. First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz

4. Ultrathin MBE-Grown AlN/GaN HEMTs with record high current densities

5. AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

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