n‐type polycrystalline silicon films obtained by crystallization ofinsituphosphorus‐doped amorphous silicon films deposited at low pressure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357167
Reference28 articles.
1. Phosphorus‐Doped Polycrystalline Silicon via LPCVD: I . Process Characterization
2. Deposition and electrical properties ofinsituphosphorus‐doped silicon films formed by low‐pressure chemical vapor deposition
3. High quality polysilicon by amorphous low pressure chemical vapor deposition
4. Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films
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