Crystal quality investigation of InGaAs/InP and InGaAlAs/InP single heterostructures grown by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341001
Reference7 articles.
1. The interpretation of X-ray rocking curves from III–V semiconductor device structures
2. X‐ray double‐crystal characterization of highly perfect InGaAs/InP grown by vapor‐phase epitaxy
3. Lpe highly perfect ingaasp/lnp structure characterization by x-ray double crystal diffractometry
4. Molecular-beam epitaxy growth of In0.53 (GaxAl1−x)0.47 As quaternary layers for optointegrated devices
5. Effect of InP substrate thermal degradation on MBE InGaAs layers
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Characterization of high-quality molecular beam epitaxial grown In Al Ga1−−As/In Al Ga1−−As/InP heterostructures;Journal of Crystal Growth;1995-01
2. MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures;Materials Science and Engineering: B;1993-11
3. Relation between photoluminescence wavelength and lattice mismatch in metalorganic vapor‐phase epitaxy InGaAs/InP;Journal of Applied Physics;1993-05
4. MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures;European Materials Research Society Symposia Proceedings;1993
5. Chemical beam epitaxy;Critical Reviews in Solid State and Materials Sciences;1992-01
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