X‐ray double‐crystal characterization of highly perfect InGaAs/InP grown by vapor‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336650
Reference13 articles.
1. Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy
2. Growth of VPE InP/InGaAs on InP for photodiode application
3. X-ray study of LEC-grown InP crystals
4. High-uniformity liquid phase epitaxial InGaAsP (λ = 1.3 μm)
5. X-ray Pendellösung fringes in Darwin reflection
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2. Molecular-beam epitaxy of high quality lattice matched In1−x−yGaxAlyAs epitaxial layers on InP substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-05
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