Growth of VPE InP/InGaAs on InP for photodiode application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
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1. Growth of InGaAs Solar Cells on InP(001) Miscut Substrates Using Solid‐Source Molecular Beam Epitaxy;physica status solidi (a);2019-09-23
2. High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot‐wall reactor;Applied Physics Letters;1993-01-11
3. A Study of the Background Carrier Concentration of InGaAs Grown by Hydride VPE;Journal of The Electrochemical Society;1990-04-01
4. An Investigation of Sodium Alumina‐Silicate Molecular Sieves for the Pretreatment of Arsine Used in a Hydride VPE Reactor;Journal of The Electrochemical Society;1989-09-01
5. Analyse des conditions de croissance de GaxIn(1- x)As/InP par la méthode aux hydrures;Revue de Physique Appliquée;1989
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