High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot‐wall reactor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109357
Reference6 articles.
1. Mass spectrometric and thermodynamics studies of the CVD of some III–V compounds
2. Epitaxial Growth of GaAs with ( C 2 H 5 ) 2GaCl and AsH3 in a Hotwall Reactor
3. Selective Epitaxy of III–V Compounds by Low‐Temperature Hydride VPE
4. Hydride VPE growth technique for InP/GaInAsP system
5. Growth of VPE InP/InGaAs on InP for photodiode application
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AlN;Crystal Growth & Design;2008-12-18
2. Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization;Journal of Applied Physics;1998-08
3. Organic vapor phase deposition: a new method for the growth of organic thin films with large optical non-linearities;Journal of Crystal Growth;1995-11
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