Hydride VPE growth technique for InP/GaInAsP system
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Vapor-phase growth of (In,Ga)(As,P) quaternary alloys
2. 1.3 μm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy
3. High sensitivity of VPE-grown InGaAs/InP-heterostructure APD with buffer layer and guard-ring structure
4. Reach-through type planar InGaAs/InP avalanche photodiode fabricated by continuous vapor phase epitaxy
5. Tech. Digest Optical Fiber Communications Conf.;Korikai,1988
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Tunable Bandgap GaInAsP Solar Cells With 18.7% Photoconversion Efficiency Synthesized by Low-Cost and High-Growth Rate Hydride Vapor Phase Epitaxy;IEEE Journal of Photovoltaics;2018-11
2. Compositional analysis on quaternary GaxIn1 − xAsyP1 − y vapour phase epitaxy: a comparison between theory and experiment;Materials Chemistry and Physics;1997-08
3. Optimisation of interaction parameters for GaxIn1−xAsyP1−y solid solutions using gas-solid equilibrium data and a sublattice model;Calphad;1994-10
4. High rate epitaxial growth of InP by merged hydride organometallic vapor phase epitaxy in a hot‐wall reactor;Applied Physics Letters;1993-01-11
5. Vapor phase epitaxy of InGaAsP by the chloride single flat temperature zone method;Journal of Crystal Growth;1992-09
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