X-ray diffraction studies of high-quality GaN heteroepitaxial films grown by metal organic chemical vapour deposition
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19940820?crawler=true&mimetype=application/pdf
Reference11 articles.
1. GaN Growth Using GaN Buffer Layer
2. Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
3. High-Power GaN P-N Junction Blue-Light-Emitting Diodes
4. III-V nitrides for electronic and optoelectronic applications
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2. X-ray Photoelectron Spectroscopy Evaluation on Surface Chemical States of GaN, InGaN and AlGaN Heteroepitaxial Thin Films Grown on Sapphire by MOCVD;MRS Proceedings;2000
3. P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition;Journal of Electronic Materials;1998-04
4. Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy;Journal of Electronic Materials;1997-11
5. Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor Deposition;Journal of The Electrochemical Society;1997-08-01
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