Effect of InP substrate thermal degradation on MBE InGaAs layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Molecular beam epitaxial growth of uniform In0.53Ga0.47As on InP with a coaxial In‐Ga oven
2. Chemical Etching of InP by H 2 O 2 ‐ H 2 SO 4 ‐ H 2 O Solution
3. An investigation by electron spectroscopy for chemical analysis of chemical treatments of the (100) surface of n-type InP epitaxial layers for Langmuir film deposition
4. XPS study of chemically etched GaAs and InP
5. Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy
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1. Ge1−Sn layers with x∼0.25 on InP(001) substrate grown by low-temperature molecular beam epitaxy reaching 70 °C and in-situ Sb doping;Materials Science in Semiconductor Processing;2024-06
2. Growth mechanism and optical properties of InGaAs/GaAsSb Su-perlattice structures;Science China Physics, Mechanics & Astronomy;2014-10-17
3. Substrate preparation and interface grading in InGaAs/InAlAs photodiodes grown on InP by molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1999
4. As capture and the growth of ultrathin InAs layers on InP;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1994-07
5. Molecular beam epitaxial growth of GaAs and other compound semiconductors;Thin Solid Films;1991-12
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