Nature of the band gap (direct versus indirect) of short‐period (GaAs)n/(AlAs)nsuperlattices grown along the [111] confinement direction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103333
Reference10 articles.
1. Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
2. (111) oriented (GaAs)n(AlAs)nsuperlattices are direct band‐gap materials for alln’s
3. Improved assessment of structural properties ofAlxGa1−xAs/GaAs heterostructures and superlattices by double-crystal x-ray diffraction
4. High Resolution X-Ray Diffraction in Multilayered Semiconductor Structures and Superlattices
5. Short-period GaAs-AlAs superlattices: Optical properties and electronic structure
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