(111) oriented (GaAs)n(AlAs)nsuperlattices are direct band‐gap materials for alln’s
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100415
Reference17 articles.
1. Morphology of Epitaxial Growth of GaAs by a Molecular Beam Method: The Observation of Surface Structures
2. Electronic structure of ultrathin (GaAs)n(AlAs)n[001] superlattices and the Ga0.5Al0.5As alloy
3. Novel crystal growth of AlGaAs/GaAs heterostructures on polar surfaces
4. Novel crystal growth of AlGaAs/GaAs heterostructures on polar surfaces
5. Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures
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