A study of oxide traps and interface states of the silicon‐silicon dioxide interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327617
Reference34 articles.
1. Studies of the effect of oxidation time and temperature on the Si‐SiO2interface using Auger sputter profiling
2. Noncrystalline silicon dioxide films on silicon: A review
3. Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator
4. Process Optimization of Radiation-Hardened CMOS Integrated Circuits
5. Effects of ionizing radiation on oxidized silicon surfaces and planar devices
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