High unsaturated room-temperature magnetoresistance in phase-engineered MoxW1−xTe2+δ ultrathin films-Reference-Cited by-同舟云学术

High unsaturated room-temperature magnetoresistance in phase-engineered MoxW1−xTe2+δ ultrathin films

Published:2019 Issue:35 Volume:7 Page:10996-11004
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Mathew Roshan Jesus¹²³⁴⁵^ORCID,Inbaraj Christy Roshini Paul¹²³⁴⁵^ORCID,Sankar Raman⁶³⁷³^ORCID,Hudie Shemsia Mohammed¹²³⁴⁵,Nikam Revannath Dnyandeo⁸⁹¹⁰,Tseng Chi-Ang¹¹¹²³,Lee Chih-Hao¹²³^ORCID,Chen Yit-Tsong¹³¹⁴³¹¹¹²^ORCID

Affiliation:

1. Department of Engineering and System Science

2. National Tsing-Hua University

3. Taiwan

4. Nano-Science and Technology Program

5. Taiwan International Graduate Program

6. Center for Condensed Matter Sciences, National Taiwan University

7. Institute of Physics, Academia Sinica

8. Center for Emerging Electric Devices and Systems (CEEDS), Gwangju Institute of Sciences and Technology

9. Gwangju

10. South Korea

11. Department of Chemistry

12. National Taiwan University

13. Institute of Atomic and Molecular Sciences

14. Academia Sinica

Abstract

Ultrathin T_d-Mo_0.27W_0.71Te_2.02 films synthesized using a chemical vapor deposition method exhibit a non-saturating magnetoresistance of 11% at room temperature.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02842K

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