Near‐Infrared Electroluminescent Light‐Emitting Transistors Based on CVD‐Synthesized Ambipolar ReSe <sub>2</sub> Nanosheets-Reference-Cited by-同舟云学术

Near‐Infrared Electroluminescent Light‐Emitting Transistors Based on CVD‐Synthesized Ambipolar ReSe ₂ Nanosheets

Published:2022-02-27 Issue:8 Volume:10 Page:2102580
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Mathew Roshan Jesus¹²³^ORCID,Cheng Kai‐Hsiang¹⁴^ORCID,Hsu Ching‐Hong⁴,Chand Pradyumna Kumar⁴^ORCID,Paul Inbaraj Christy Roshini⁵^ORCID,Peng Yu‐Lou⁴,Yang Jung‐Yen⁶,Lee Chih‐Hao³^ORCID,Chen Yit‐Tsong¹⁴^ORCID

Affiliation:

1. Institute of Atomic and Molecular Sciences Academia Sinica Taipei 10617 Taiwan

2. Nano‐Science and Technology Program Taiwan International Graduate Program Academia Sinica Taipei 11529 Taiwan

3. Department of Engineering and System Science National Tsing‐Hua University Hsinchu 30013 Taiwan

4. Department of Chemistry National Taiwan University Taipei 10617 Taiwan

5. Department of Physics National Taiwan University Taipei 10617 Taiwan

6. National Applied Research Laboratories Taiwan Semiconductor Research Institute Hsinchu 30078 Taiwan

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202102580

Reference61 articles.

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3. Chemical Doping and Electron−Hole Conduction Asymmetry in Graphene Devices

4. Gate dependent photocurrents at a graphene p-n junction

5. Gate-Activated Photoresponse in a Graphene p–n Junction

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