Studies of the effect of oxidation time and temperature on the Si‐SiO2interface using Auger sputter profiling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325858
Reference24 articles.
1. Field dependent internal photoemission probe of the electronic structure of the Si–SiO2 interface
2. Auger depth profiling of interfaces in MOS and MNOS structures
3. An Auger analysis of the SiO2‐Si interface
4. New studies of the Si-SiO2 interface using auger sputter profiling
5. Observation of an intermediate chemical state of silicon in the Si/SiO2interface by Auger sputter profiling
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