Study of SiGe oxidation kinetics for preferential SiO2 formation under a low O2 pressure condition
Author:
Affiliation:
1. Department of Materials Engineering, The University of Tokyo 7-3-1 Hongo, Tokyo-to 113-8656, Japan
Funder
MEXT | Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference19 articles.
1. Oxidation studies of SiGe
2. Oxidation of Si1−xGexalloys at atmospheric and elevated pressure
3. Low temperature oxidation of SiGe in ozone: Ultrathin oxides
4. Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers
5. Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches
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1. Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111);Journal of Applied Physics;2024-03-19
2. Engineering of dense arrays of Vertical Si1-x Ge x nanostructures;Nanotechnology;2022-12-23
3. Electrical Characteristics of Si0.8Ge0.2 p-MOSFET With TMA Pre-Doping and NH3 Plasma IL Treatment;IEEE Transactions on Electron Devices;2022-04
4. Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates;IEEE Transactions on Electron Devices;2022-03
5. Operando study of the preferential growth of SiO2 during the dry thermal oxidation of Si0.60Ge0.40(001) by ambient pressure x-ray photoelectron spectroscopy;Journal of Vacuum Science & Technology A;2021-09
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