Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367045
Reference24 articles.
1. UHV/CVD growth of Si and Si:Ge alloys: chemistry, physics, and device applications
2. Physics and applications of GexSi1-x/Si strained-layer heterostructures
3. Heterojunction bipolar transistors using Si-Ge alloys
4. Growth of 100 GHz SiGe-Heterobipolar Transistor (HBT) Structures
5. A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Operando study of the preferential growth of SiO2 during the dry thermal oxidation of Si0.60Ge0.40(001) by ambient pressure x-ray photoelectron spectroscopy;Journal of Vacuum Science & Technology A;2021-09
2. Study of SiGe oxidation kinetics for preferential SiO2 formation under a low O2 pressure condition;Journal of Applied Physics;2017-11-08
3. Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization;Journal of Applied Physics;2013-03-14
4. Various Trap States at SiGe–SiO 2 Interface Formed by a Pulsed Laser;Chinese Physics Letters;2009-02
5. Enhancement of photoluminescence emission in low-dimensional structures formed by irradiation of laser;Journal of Applied Physics;2007-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3