Determination of carrier concentration and compensation microprofiles in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference18 articles.
1. See for example, J. R. Ehrstein, inSemiconductor Silicon1977, edited by H. R. Huff and E. Sirtl (Electrochemical Society, Princeton, N. J. 1977), p. 327.
2. SEM observation of dopant striae in silicon
3. Determination of dopant‐concentration diffusion length and lifetime variations in silicon by scanning electron microscopy
4. Doping inhomogeneities in semiconductors measured by electroreflectance
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