Microsegregation in conventional Si-doped LEC GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting Diodes
2. The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
3. Transmission Electron Microscope Study of Gallium Arsenide
4. Electron mobility and free‐carrier absorption in GaAs: Determination of the compensation ratio
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