The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs-Reference-Cited by-同舟云学术

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The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs

Published:1983-05-20 Issue:Part 2, No. 5 Volume:22 Page:L270-L272
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Honda Takashi,Ishii Yasunobu,Miyazawa Shintaro,Yamazaki Hajime,Nanishi Yasushi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of indium-doped and undoped GaAs minimum ionising particle detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1996-01

2. The influence of GaAs crystal composition on the features of matrix microdefects;Journal of Crystal Growth;1994-01

3. X-ray topography of gallium arsenide used for MESFET fabrication;Semiconductor Science and Technology;1992-01-01

4. Effect of dislocations on GaAs-MESFET threshold voltage, and the growth of dislocation-free, semi-insulating GaAs;Progress in Crystal Growth and Characterization of Materials;1992-01

5. Microsegregation in conventional Si-doped LEC GaAs;Journal of Crystal Growth;1991-02

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