The influence of GaAs crystal composition on the features of matrix microdefects
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting Diodes
2. The Influence of Dislocation Density on the Uniformity of Electrical Properties of Si Implanted, Semi-Insulating LEC-GaAs
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4. X-ray diffuse scattering identification of matrix As-rich microdefects in GaAs crystals
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1. Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si;Solid State Phenomena;2005-12
2. First-principles study of As interstitials in GaAs: Convergence, relaxation, and formation energy;Physical Review B;2002-11-01
3. A comprehensive thermodynamic analysis of native point defect and dopant solubilities in gallium arsenide;Journal of Applied Physics;1999-05-15
4. Arsenic Interstitial Pairs in GaAs;Materials Science Forum;1997-12
5. Diffuse x-ray scattering from thermal donors in Czochralski-grown silicon;Physical Review B;1997-09-01
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