Determination of the charge carrier concentration across growth striations inn‐GaAs by Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350673
Reference14 articles.
1. SEM observation of dopant striae in silicon
2. Dopant inhomogeneity in Czochralski-grown indium phosphide ingots doped with germanium
3. Effects of thermal annealing on semi‐insulating undoped GaAs grown by the liquid‐encapsulated Czochralski technique
4. Infrared laser scanning microscopy in transmission: A new high‐resolution technique for the study of inhomogeneities in bulk GaAs
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