Dopant inhomogeneity in Czochralski-grown indium phosphide ingots doped with germanium-Reference-Cited by-同舟云学术

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Dopant inhomogeneity in Czochralski-grown indium phosphide ingots doped with germanium

Published:1983-11 Issue:1 Volume:64 Page:108-114
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Warwick C.A.,Brown G.T.,Booker G.R.,Cockayne B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. The growth of dislocation-free Ge-DOPED InP

2. Common Occurrence of Artifacts or ``Ghost'' Peaks in Semiconductor Injection Electroluminescence Spectra

3. C.A. Warwick and G.R. Booker, in: Proc. 3rd Oxford Conf. on the Microscopy of Semiconducting Materials, Inst. Phys. Conf. Ser. 67 (Inst. Phys., London, in press).

4. The growth and perfection of single crystal indium phosphide produced by the LEC technique

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1. Phase Separation in AlxGa1-xAs Nanowhiskers Grown by the Solution−Liquid−Solid Mechanism;Journal of the American Chemical Society;2001-04-18

2. Cathodoluminescence;Luminescence of Solids;1998

3. Determination of the charge carrier concentration across growth striations inn‐GaAs by Raman spectroscopy;Journal of Applied Physics;1992-01

4. Double‐crystal x‐ray investigations of semi‐insulating (Ga,Fe) double‐doped InP substrates;Journal of Applied Physics;1988-03-15

5. High‐resolution luminescence studies of indium phosphide under ohmic contacts;Journal of Applied Physics;1985-02-15

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