Stabilization and removal of the native oxides at the surface of (100)InP by low‐pressure exposure to NH3
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344046
Reference17 articles.
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5. Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP‐based metal‐insulator‐semiconductor devices
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1. Atomic hydrogen cleaning of InP(100): Electron yield and surface morphology of negative electron affinity activated surfaces;Journal of Applied Physics;2002-02
2. UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation;Microelectronic Engineering;1997-06
3. UVCVD dielectric films for InP-based optoelectronic devices;Materials Science and Engineering: B;1993-06
4. Interaction of atomic hydrogen with native oxides on GaAs(100);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-07
5. Interaction of atomic hydrogen with native oxides on InP(100);Surface Science;1992-05
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