431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes-Reference-Cited by-同舟云学术

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

Published:2018-01-15 Issue:3 Volume:112 Page:033508
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Growden Tyler A.¹^ORCID,Zhang Weidong²,Brown Elliott R.²,Storm David F.³,Hansen Katurah²,Fakhimi Parastou¹^ORCID,Meyer David J.³,Berger Paul R.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Departments of Physics and Electrical Engineering Wright State University, Dayton, Ohio 45435, USA

3. U.S. Naval Research Laboratory, Washington, DC 20375, USA

Funder

DOD | United States Navy | Office of Naval Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5010794

Reference29 articles.

1. AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

2. Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices

3. The effect of internal fields on tunneling current in strained GaN/AlxGa1−x N(0001) structures

4. Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures

5. Vertical transport in group III‐nitride heterostructures and application in AlN/GaN resonant tunneling diodes

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