Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode

Abstract

In this paper, we studied the effect of an electromagnetic field of an ultrahigh frequency on the I–V characteristics of tunnel diodes. The influence of thermionic current on the change in the ratio of the values of tunnel currents at depth and the peak formed in the tunnel diode as a result of a strong electromagnetic field and on the change in the ratio of the values of tunnel currents at the highest and lowest points without exposure to a strong electromagnetic field. The I–V characteristics of a tunnel diode under the action of a microwave field is determined based on the theory of Knott and Demassa and the Tsu-Esaki model. The characteristics of the Tsu-Esaki and Karlovsky models used to determine the effect of the tunnel current in the extremely high frequency field (EHF) are shown. Chynoweth's model and Knott and Demassa's theory have shown that in germanium-based tunnel diodes, under an extremely high frequency (EHF) field, the amount of excess current generated in the tunnel diode increases. According to the Tsu-Esaki theory and Knott and Demassa theory is found to decrease the value of the differential resistance of a tunnel diode with a p-n junction under the action of a microwave field, regardless of the type of heterostructure or doping level. According to the Tsu-Esaki theory and Knott and Demassa found decrease in the diffusion capacitance of a tunnel diode with a p-n junction under the action of a microwave field, regardless of the type of heterostructure or doping level. A decrease in the transparency coefficient due to an increase in the internal field at the p-n junction boundary of a Ge-based tunnel diode under the action of a microwave field has been established. A formula is determined for determining the total current of a tunnel diode under the action of both microwave and magnetic fields, taking into account the transparency coefficient of the tunnel diode.