Tunnel junction I(V) characteristics: Review and a new model for p-n homojunctions
Author:
Affiliation:
1. University of Lyon, Lyon Institute of Nanotechnology (INL) UMR CNRS 5270, INSA de Lyon, Villeurbanne F-69621, France
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5104314
Reference24 articles.
1. A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications
2. Armchair Graphene Nanoribbon Resonant Tunneling Diodes Using Antidote and BN Doping
3. Intrinsic concentration, effective densities of states, and effective mass in silicon
4. Numerical simulation of tunnel diodes for multi‐junction solar cells
5. Modeling Multijunction Solar Cells by Nonlocal Tunneling and Subcell Analysis
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