Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1540239
Reference11 articles.
1. AlGaN∕GaN HEMTs on silicon substrates with fT of 32∕20 GHz and fmax of 27∕22 GHz for 0.5∕0.7 m gate length
2. Backgating and light sensitivity in ion-implanted GaAs integrated circuits
3. An analytical model for the photodetection mechanisms in high-electron mobility transistors
4. Back Bias Effects in AlGaN/GaN HFETs
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