Investigation of buffer traps in an AlGaN/GaN/Si high electron mobility transistor by backgating current deep level transient spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1540239
Reference11 articles.
1. AlGaN∕GaN HEMTs on silicon substrates with fT of 32∕20 GHz and fmax of 27∕22 GHz for 0.5∕0.7 m gate length
2. Backgating and light sensitivity in ion-implanted GaAs integrated circuits
3. An analytical model for the photodetection mechanisms in high-electron mobility transistors
4. Back Bias Effects in AlGaN/GaN HFETs
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1. Role of the GaN-on-Si Epi-Stack on ΔR ON Caused by Back-Gating Stress;IEEE Transactions on Electron Devices;2023-10
2. An accurate method to extract thermal resistance of GaN-on-Si HEMTs;Applied Physics Letters;2023-05-22
3. Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants;IEEE Transactions on Electron Devices;2022-06
4. Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03
5. Characterization of AlGaN/GaN high electron mobility transistors on GaN substrates with different thicknesses of GaN channel and buffer layers using side-gate modulation;Japanese Journal of Applied Physics;2021-12-15
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