AlGaN∕GaN HEMTs on silicon substrates with fT of 32∕20 GHz and fmax of 27∕22 GHz for 0.5∕0.7 m gate length
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020203?crawler=true&mimetype=application/pdf
Reference7 articles.
1. High electron mobility AlGaN/GaN heterostructure on (111) Si
2. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
3. AlGaN/GaN high electron mobility transistors on Si(111) substrates
4. AlGaN/GaN Round-HEMTs on (111) silicon substrates
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2. Numerical performance evaluation of AlGaN/GaN high electron mobility transistors including gate length effects;Physica E: Low-dimensional Systems and Nanostructures;2009-08
3. Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy;Materials Science and Engineering: C;2008-07
4. Growth of AlGaN/GaN HEMTs on Silicon Substrates by MBE;MRS Proceedings;2008
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