Evidence of bistable shallow‐deep silicon donors in GaAs‐AlAs superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356648
Reference21 articles.
1. Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System
2. A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
3. Electron trapping by metastable effective-mass states ofDXdonors in indirect-band-gapAlxGa1−xAs:Te
4. Pressure studies of impurity levels in AlxGa1-xAs
5. Deep donor levels (DXcenters) in III‐V semiconductors
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1. Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1−xN quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2007-09
2. Exciton in wurtzite GaN/AlxGa1−xN coupled quantum dots;Journal of Luminescence;2006-06
3. Compositional and temperature dependence of the mobility and carrier concentration of a-AlxGa1−x As:H films;Renewable Energy;2001-11
4. Investigation of DX center in silicon doped GaAs–AlAs short period superlattices;Journal of Applied Physics;1999-05
5. Physics of GaAs-AlAs superlattices under pressure application to sensors;PHYS STATUS SOLIDI B;1999
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