Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1−xN quantum dots
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. High-density and size-controlled GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition
2. Quantum confined Stark effect in single self-assembled GaN/AlN quantum dots
3. Intraband spectroscopy of self-organized GaN/AlN quantum dots
4. Optical and structural properties of rare earth doped GaN quantum dots
5. Near-field optical spectroscopy and microscopy of self-assembled GaN∕AlN nanostructures
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1. Supercritical solvothermal preparation of a ZnxCd1−xS visible photocatalyst with enhanced activity;J. Mater. Chem. A;2014
2. Radiative life time of an exciton confined in a strained GaN/Ga 1- x Al x N cylindrical dot: built-in electric field effects;Chinese Physics B;2011-07
3. Influence of wetting layers on the electric potentials and optical properties of InGaN quantum dots;Semiconductor Science and Technology;2010-10-15
4. Fully coupled and semi-coupled piezoelectric models on the optical properties of InGaN quantum dots;Semiconductor Science and Technology;2010-05-11
5. Influence of the piezoelectric constant on the electronic structure of wurtzite InGaN quantum dots;physica status solidi (c);2010-04-20
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