Intraband spectroscopy of self-organized GaN/AlN quantum dots-Reference-Cited by-同舟云学术

Intraband spectroscopy of self-organized GaN/AlN quantum dots

Published:2003-04 Issue: Volume:17 Page:60-63
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Helman Ana,Fossard Frédéric,Tchernycheva Maria,Moumanis Khalid,Lusson Alain,Julien François,Damilano Benjamin,Grandjean Nicolas,Massies Jean,Adelman Christophe,Daudin Bruno,Le Si Dang Daniel

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-µ m Intersubband Transition in AlGaN/GaN Quantum Wells

2. Intersubband absorption in GaN/AlGaN multiple quantum wells in the wavelength range of λ∼1.75–4.2 μm

3. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

4. Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells

5. Sub-picosecond electron scattering time for ≃ 1.55 [micro sign]m intersubband transitions in GaN/AlGaN multiple quantum wells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1−xN quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2007-09

2. Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength;Applied Physics Letters;2006-04-03

3. Intraband absorption of doped GaN∕AlN quantum dots at telecommunication wavelengths;Applied Physics Letters;2005-09-05

4. Optical and structural characterization of self-organized stacked GaN/AlN quantum dots;Journal of Physics: Condensed Matter;2003-12-22

5. Spectroscopy of Intraband Electron Confinement in Self-Assembled GaN/AlN Quantum Dots;MRS Proceedings;2003