Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.127073
Reference19 articles.
1. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
2. All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells
3. Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells
4. Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs
5. Intersubband transitions at 1.3 and 1.55 /spl mu/m in a novel coupled InGaAs-AlAsSb double-quantum-well structure
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3. Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV;Photonics;2023-08-07
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