Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects-Reference-Cited by-同舟云学术

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Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Published:2020-05-29 Issue:20 Volume:127 Page:205701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gamov I.¹^ORCID,Richter E.²^ORCID,Weyers M.²^ORCID,Gärtner G.³,Irmscher K.¹^ORCID

Affiliation:

1. Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

2. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

3. Institute of Experimental Physics, TU Bergakademie Freiberg, 09599 Freiberg, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0010844

Reference29 articles.

1. The 2018 GaN power electronics roadmap

2. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

3. AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$

4. On reduction of current leakage in GaN by carbon-doping

5. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

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1. Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2024-04-01

2. Quantitative analysis of carbon impurity concentrations in GaN epilayers by cathodoluminescence;Micron;2023-09

3. Mechanism for self-compensation in heavily carbon doped GaN;AIP Advances;2023-03-01

4. Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect;Physical Review B;2022-11-29

5. The movement of the Fermi level in heavily C doped GaN;Japanese Journal of Applied Physics;2022-08-15

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