On reduction of current leakage in GaN by carbon-doping
Author:
Affiliation:
1. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39106 Magdeburg, Germany
Funder
Bundesministerium für Bildung und Forschung (BMBF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4968823
Reference27 articles.
1. Role of carbon in GaN
2. Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy
3. Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors
4. Characterization of threading dislocations in GaN epitaxial layers
5. Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors
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