A new circuit model for tunneling related trapping at insulator‐semiconductor interfaces in accumulation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351887
Reference14 articles.
1. Electrical characteristics of Si3N4/Si/GaAs metal‐insulator‐semiconductor capacitor
2. High‐Quality 100Å SiO2 Films Fabricated by a New ECR Microwave PECVD Process
3. Physical‐Electrical Properties of Silicon Nitride Deposited by PECVD on III–V Semiconductors
4. Unpinned GaAs MOS capacitors and transistors
5. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
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