Electrical characteristics of Si3N4/Si/GaAs metal‐insulator‐semiconductor capacitor

Author:

Mui D. S. L.,Liaw H.,Demirel A. L.,Strite S.,Morkoç H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 48 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Structural, electronic, and optical properties of three types Ca3N2 from first-principles study;Journal of Molecular Modeling;2023-12-13

2. Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD;The European Physical Journal Applied Physics;2022

3. A theoretical study of the structures and electronic transitions of small silicon nitride clusters (SinNm, n + m ⩽ 4);Journal of Molecular Spectroscopy;2016-12

4. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19

5. High Mobility Channels;High Permittivity Gate Dielectric Materials;2013

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