Author:
Houssa Michel,Ye Peide,Heyns Marc
Publisher
Springer Berlin Heidelberg
Reference108 articles.
1. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89, 5243 (2001)
2. M. Houssa (ed.), High-κ Gate Dielectrics (Institute of Physics Publishing, London, 2004)
3. H. Huff, D. Gilmer (eds.), High-κGate Dielectric Materials for VLSI MOSFET Applications (Springer, 2004)
4. M. Houssa, L. Pantisano, L.Å. Ragnarsson, R. Degraeve, T. Schram, G. Pourtois, S. De Gendt, G. Groeseneken, M.M. Heyns, Mater. Sci. Eng. R 51, 37 (2006)
5. C. Claeys, E. Simoen (eds.), Germanium Based Technologies: From Materials to Devices (Elsevier, Oxford, 2007)
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