LPE growth and properties of GaP‐ (AlGa)As‐GaAs heterostructures as a function of the GaP substrate roughness
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.321886
Reference16 articles.
1. An improved GaAs transmission photocathode
2. Ga1−xAlxAs LED Structures Grown on GaP Substrates
3. Electron lifetime and diffusion constant in germanium‐doped gallium arsenide
4. Calculation of the minority‐carrier confinement properties of III‐V semiconductor heterojunctions (applied to transmission‐mode photocathodes)
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1. GaAs photocathodes for low light level imaging;Journal of Crystal Growth;1981-10
2. Chapter 3 NEA Semiconductor Photoemitters;Semiconductors and Semimetals;1981
3. LPE growth of Pb1-xSnxTe layers on metal-etched substrates;Journal of Crystal Growth;1980-03
4. Photoemissive detectors;Topics in Applied Physics;1980
5. Transient-mode liquid phase epitaxy of GaAs on InP and AlGaAs on GaP;Journal of Electronic Materials;1978-03
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