Ga1−xAlxAs LED Structures Grown on GaP Substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653981
Reference7 articles.
1. Room‐Temperature cw Operation of a GaAs1−xPx Diode‐Pumped YAG:Nd Laser
2. GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
3. IMPROVED RED AND INFRARED LIGHT EMITTING AlxGa1−xAs LASER DIODES USING THE CLOSE‐CONFINEMENT STRUCTURE
4. EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY
5. Efficient Electroluminescence from Zinc‐Diffused Ga1−xAlxAs Diodes at 25°C
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