IMPROVED RED AND INFRARED LIGHT EMITTING AlxGa1−xAs LASER DIODES USING THE CLOSE‐CONFINEMENT STRUCTURE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652837
Reference9 articles.
1. Stimulated emission from Ga<inf>1-x</inf>Al<inf>x</inf>As diodes at 77°K
2. Stimulated emission at 300°K and simultaneous lasing at two wavelengths in epitaxial AlxGal-xAs injection lasers
3. Lasing action in (Ga1-xAlx)As diodes
4. Conduction Band Minima in AlAs and AlSb
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