An improved GaAs transmission photocathode-Reference-Cited by-同舟云学术

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An improved GaAs transmission photocathode

Published:1972-10-01 Issue:10 Volume:5 Page:L89-L92
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Allenson M B,King P G R,Rowland M C,Steward G J,Syms C H A

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/5/i=10/a=101/pdf

Reference15 articles.

1. The performance of negative electron affinity photocathodes

2. A GaAs-Cs-O transmission photocathode

3. Operation of III‐V Semiconductor Photocathodes in the Semitransparent Mode

4. 3-5 compound photocathodes: A new family of photoemitters with greatly improved performance

5. Electroreflectance Spectra of AlxGa1−xAs Alloys

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1. Resolution properties of reflection-mode exponential-doping GaAs photocathodes;Materials Science in Semiconductor Processing;2014-08

2. Resolution characteristics for reflection-mode exponential-doping GaN photocathode;Applied Optics;2014-01-20

3. Fabrication and performance of novel monolithic GaAs/AlGaAs microvacuum transmission-mode photoemitters;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-01

4. Uniform growth of Te-doped AlxGa1t−xAs (x = 0-0.65) on (111) B GaP substrates by liquid phase epitaxy;Journal of Crystal Growth;1991-12

5. Monte Carlo simulation of the temporal response times of negative electron affinity GaAs transmission photocathodes;Physics Letters A;1989-12

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