Resolution characteristics for reflection-mode exponential-doping GaN photocathode-Reference-Cited by-同舟云学术

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Resolution characteristics for reflection-mode exponential-doping GaN photocathode

Published:2014-01-20 Issue:3 Volume:53 Page:335
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Wang Honggang,Qian Yunsheng,Du Yujie,Xu Yuan,Lu Liubing,Chang Benkang

Funder

the National Natural Science Foundation of China, the Postdoctoral Research Foundation of Jiangsu Province, China

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference27 articles.

1. Influence of Backscattered Electrons on the Resolution of Transmission Secondary Electron Emitters

2. An improved GaAs transmission photocathode

3. Application of negative electron affinity materials to imaging devices

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Resolution characteristics of varying doping and varying composition AlxGa1–xAs/GaAs reflective photocathodes;Acta Physica Sinica;2022

2. Comparative study of cesium adsorption on GaN planar and nanowire photocathodes;Journal of Nanophotonics;2019-03-13

3. Research on quantum efficiency of GaN wire photocathode;Optical Materials;2017-02

4. Cs and Cs/O adsorption mechanism on GaN nanowires photocathode;Journal of Materials Science;2017-01-23

5. Resolution characteristics of graded band-gap reflection-mode AlGaAs/GaAs photocathodes;Optics Communications;2015-12

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