Calculation of the minority‐carrier confinement properties of III‐V semiconductor heterojunctions (applied to transmission‐mode photocathodes)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663410
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1. JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
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3. Operation of III‐V Semiconductor Photocathodes in the Semitransparent Mode
4. n-n Semiconductor heterojunctions
5. Dislocation morphology in graded heterojunctions: GaAs1?xPx
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