AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTURE
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1653225
Reference7 articles.
1. ELECTRON EMISSION FROM A ``COLD‐CATHODE'' GaAs p‐n JUNCTION
2. ELECTRON EMISSION FROM THE SCHOTTKY BARRIER STRUCTURE ZnS:Pt:Cs
3. The Schottky barrier cold cathode
4. Cold cathode electron emitter
5. An opto-electronic cold cathode for cathode ray tubes
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1. Proposal for a semiconductor high resolution tracking detector;Nuclear Instruments and Methods in Physics Research;1983-06
2. Chapter 3 NEA Semiconductor Photoemitters;Semiconductors and Semimetals;1981
3. The application of heterojunction structures to optical devices;Journal of Electronic Materials;1975-10
4. Gallium arsenide and (alga)as devices prepared by Liquid-Phase epitaxy (Review Article);Journal of Electronic Materials;1974-11
5. Calculation of the minority‐carrier confinement properties of III‐V semiconductor heterojunctions (applied to transmission‐mode photocathodes);Journal of Applied Physics;1974-03
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