Photoluminescence energy and interface chemistry of GaInP/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120388
Reference16 articles.
1. 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers
2. Microwave performance of a self-aligned GaInP/GaAs heterojunction bipolar transistor
3. Optical investigations of GaAs‐GaInP quantum wells grown on the GaAs, InP, and Si substrates
4. High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy
5. Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 μm InGaAs/InGaP strained quantum well lasers
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1. Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies;Applied Surface Science;2016-01
2. High doping level in Mg-doped GaN layers grown at low temperature;Journal of Applied Physics;2008-01
3. Atomic diffusion and interface electronic structure at In[sub 0.49]Ga[sub 0.51]P∕GaAs heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. Atomic diffusion and electronic structure in Al[sub 0.52]In[sub 0.48]P∕GaAs heterostructures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2007
5. Photoluminescence in Analysis of Surfaces and Interfaces;Encyclopedia of Analytical Chemistry;2006-09-15
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